Electron and hole transfer from indium phosphide quantum dots.

نویسندگان

  • J L Blackburn
  • D C Selmarten
  • R J Ellingson
  • M Jones
  • O Micic
  • A J Nozik
چکیده

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new approximately 4-ps component in the TA decay. It is found that electron transfer to TiO2 is primarily mediated through surface-localized states on the InP QDs.

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عنوان ژورنال:
  • The journal of physical chemistry. B

دوره 109 7  شماره 

صفحات  -

تاریخ انتشار 2005